DMG2307LQ Leiditech

DMG2307LQ electronic component of Leiditech
DMG2307LQ Leiditech
DMG2307LQ MOSFETs
DMG2307LQ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMG2307LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG2307LQ MOSFETs are a product manufactured by Leiditech. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMG2307LQ
Manufacturer: Leiditech
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: DMG2307LQ Datasheet (PDF)
Price (USD)
5: USD 0.104 ea
Line Total: USD 0.52 
Availability : 0
  
QtyUnit Price
5$ 0.104
50$ 0.1016
150$ 0.1
500$ 0.0664

Availability 0
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.104
50$ 0.1016
150$ 0.1
500$ 0.0664

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMG2307LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG2307LQ and other electronic components in the MOSFETs category and beyond.

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The DMG2307LQ is a MOSFET with the SOT-23 form factor. It is manufactured by Leiditech and is compliant with ROHS standards. The device is designed for use in voltage switching and level shifting applications. It features low on-resistance, fast switching speed, and on-resistance temperature variation performance. This device features an ON-state RDS(ON) of 150 mO (max) at 10V and a maximum drain current capability of 650 mA and a maximum drain-source voltage of -20 V. It also features high transconductance, breakdown voltage of 30V, and low gate charge. This makes it ideal for use in portable battery-powered applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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