Product Information

LBC847BTT1G

LBC847BTT1G electronic component of Leshan

Datasheet
Transistors (NPN/PNP) NPN 100mA 45V SC-89 RoHS

Manufacturer: Leshan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0283 ea
Line Total: USD 0.57

504 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
38 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20

Stock Image

LBC847BTT1G
Leshan

20 : USD 0.028
200 : USD 0.0227
600 : USD 0.0197
3000 : USD 0.018
9000 : USD 0.0163
21000 : USD 0.0155

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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Radio CompanyThe Leshan Radio Company LBC847BTT1G is a NPN, 100mA, 45V transistor housed in an SC-89 package and designed to meet the Restriction of Hazardous Substances (RoHS) directive. This small signal transistor is typically used for general purpose switching and amplification applications. The NPN type transistor features a breakdown voltage rating of 45-volts and is designed to provide up to 100mA of current. The LBC847BTT1G is designed to operate in both DC and AC environments and provides solid breakdown characteristics and stability based on its construction. This transistor can be used for various power applications including switching during ON/OFF cycles or for modulation and power amplification in automotive and small power device applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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