LBC857CDW1T1G Leshan

LBC857CDW1T1G electronic component of Leshan
LBC857CDW1T1G Leshan
LBC857CDW1T1G Bipolar Transistors - BJT
LBC857CDW1T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of LBC857CDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC857CDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. LBC857CDW1T1G
Manufacturer: Leshan
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) SOT-363 RoHS
Datasheet: LBC857CDW1T1G Datasheet (PDF)
Price (USD)
20: USD 0.053 ea
Line Total: USD 1.06 
Availability : 77
  
Ship by Fri. 07 Nov to Thu. 13 Nov
QtyUnit Price
20$ 0.053
200$ 0.0414
600$ 0.0261
3000$ 0.0209
9000$ 0.0186
21000$ 0.0174

Availability 77
Ship by Fri. 07 Nov to Thu. 13 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.053
200$ 0.0414
600$ 0.0261
3000$ 0.0209
9000$ 0.0186
21000$ 0.0174

   
Manufacturer
Product Category
Brand
Rohs
Package
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LBC857CDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC857CDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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RadioThe LBC857CDW1T1G is a NPN transistor packaged in a SOT-363 RoHS package manufactured by Leshan Radio. It is an integrated circuit designed for voltage amplifiers and switching applications. It has an operating temperature range of -55 °C to +150 °C, a maximum collector-emitter voltage of 30 V, and a maximum collector current of 0.2 A. This transistor features low noise level and high power gain, making it suitable for driving large loads. It is also characterized by a fast switching speed and a low saturation voltage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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