Product Information

LN2312LT1G

LN2312LT1G electronic component of Leshan

Datasheet
MOSFET N Trench 20V 4.9A 1V @ 250uA 41 mΩ @ 5A,4.5V SOT-23 (SOT-23-3) RoHS
Manufacturer: Leshan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0583 ea
Line Total: USD 0.58

17460 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
407 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 10
Multiples : 10

Stock Image

LN2312LT1G
Leshan

10 : USD 0.0599
100 : USD 0.0493
300 : USD 0.0438
3000 : USD 0.0398
6000 : USD 0.0366
9000 : USD 0.035

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

Radio CompanyThe LN2312LT1G is a MOSFET transistor with N Trench technology manufactured by Leshan Radio Company. It is rated for 20V and 4.9A at 1V and 250uA, and 41mO @ 5A, 4.5V. It is packaged in the RoHS compliant SOT-23-3 (SOT-23) surface mount package. This transistor is suitable for a variety of applications such as level shifting, current-limiting, voltage switching and similar.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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