X-On Electronics has gained recognition as a prominent supplier of MMBT2222ALT1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2222ALT1 Bipolar Transistors - BJT are a product manufactured by LGE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT2222ALT1 LGE

MMBT2222ALT1 electronic component of LGE

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Part No.	MMBT2222ALT1
Manufacturer:	LGE
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-23 RoHS
Datasheet:	MMBT2222ALT1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.037 ea
Line Total: USD 1.85

Availability - 24007
Ship by Tue. 24 Jun to Fri. 27 Jun

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT2222ALT1 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

24007

Ship by Tue. 24 Jun to Fri. 27 Jun

MOQ : 50
Multiples : 50

50 : USD 0.037
500 : USD 0.03
3000 : USD 0.0154
6000 : USD 0.0138
24000 : USD 0.0123
51000 : USD 0.0116

Specifications

Manufacturer

LGE LGE

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Brand

LGE LGE

Rohs

Y Y

Package

SOT - 23 SOT - 23

Transistor Type

NPN NPN

Current - Collector Ic Max

600 mA 600 mA

Voltage - Collector Emitter Breakdown Max

40 V 40 V

Power - Max

300 mW 300 mW

Collector Cut-Off Current Icbo

10 nA 10 nA

Collector-Emitter Breakdown Voltage Vceo

40 V 40 V

Power Dissipation Pd

300 mW 300 mW

Collector Current Ic

600 mA 600 mA

Dc Current Gain Hfe@Ic Vce

100@150 mA , 10V 100@150 mA , 10V

Transition Frequency Ft

300MHz 300MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

300 mV @150 mA , 15 mA 300 mV @150 mA , 15 mA

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

MMBT2222ALT1 Alternative Parts

We are delighted to provide the MMBT2222ALT1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2222ALT1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBT2222ALT1 is a NPN transistor in a SOT-23 RoHS package manufactured by LGE. This transistor is designed for switching and amplifier applications operating at current levels up to 200mA. It has a maximum voltage rating of 40V and a maximum power dissipation of 500mW. The device is RoHS compliant and is suitable for use in a wide variety of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
24007 Ship by Tue. 24 Jun to Fri. 27 Jun MOQ : 50 Multiples : 50	50 : USD 0.037 500 : USD 0.03 3000 : USD 0.0154 6000 : USD 0.0138 24000 : USD 0.0123 51000 : USD 0.0116

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