LSIC1MO120E0120 Littelfuse

LSIC1MO120E0120 electronic component of Littelfuse
LSIC1MO120E0120 Littelfuse
LSIC1MO120E0120 SiC MOSFETs
LSIC1MO120E0120  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of LSIC1MO120E0120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. LSIC1MO120E0120 SiC MOSFETs are a product manufactured by Littelfuse. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No. LSIC1MO120E0120
Manufacturer: Littelfuse
Category: SiC MOSFETs
Description: SiC MOSFETs 1200 V 120 mOhm SiC Mosfet
Datasheet: LSIC1MO120E0120 Datasheet (PDF)
Price (USD)
19: USD 14.1266 ea
Line Total: USD 268.41 
Availability : 0
  
QtyUnit Price
19$ 14.1266

Availability 0
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 19
Multiples : 1
QtyUnit Price
19$ 14.1266


Availability 0
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 12.144
450$ 11.121
900$ 10.703


Availability 0
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 15.7539
3$ 14.899

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the LSIC1MO120E0120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LSIC1MO120E0120 and other electronic components in the SiC MOSFETs category and beyond.

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LSIC1MO120E0120 Silicon Carbide MOSFET Datasheet LSIC1MO120E0120 1200 V, 120 mOhm N-Channel SiC MOSFET Product Summary Characteristic Value Unit VDS 1200 V Typical R 120 mOhm DS(ON) ID (TC C) 18 A Features Optimized for high-frequency, high-efficiency applications Extremely low gate charge and output capacitance Agency Approvals and Environmental Low gate resistance for high-frequency switching Environmental Approvals Normally-off operations at all temperatures Ultra-low on-resistance RoHS-compliant, lead-free, and halogen-free Circuit Diagram Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High Voltage DC/DC Converters Battery Chargers Induction Heating 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 2021 Littelfuse, Inc. Revised: 1/6/2021 LSIC1MO120E0120 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings ........................................................................................................................................... 3 2. Thermal Characteristics .................................................................................................................................. 3 3. Electrical Characteristics ................................................................................................................................. 3 3.1. Static Characteristics (T = 25 C unless otherwise specified) ................................................................ 3 J 3.2. Dynamic Characteristics (T = 25 C unless otherwise specified) ........................................................... 4 J 4. Reverse Diode Characteristics (T = 25 C unless otherwise specified) ........................................................ 4 J 5. Performance Curves ....................................................................................................................................... 5 6. Package Dimensions ...................................................................................................................................... 9 7. Part Numbering and Marking .......................................................................................................................... 9 8. Packing Options .............................................................................................................................................. 9 9. Packing Specifications .................................................................................................................................. 10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 2021 Littelfuse, Inc. Revised: 1/6/2021

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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