DTA123YUA Luguang

DTA123YUA electronic component of Luguang
DTA123YUA Luguang
DTA123YUA Bipolar Transistors - BJT
DTA123YUA  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of DTA123YUA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DTA123YUA Bipolar Transistors - BJT are a product manufactured by Luguang. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. DTA123YUA
Manufacturer: Luguang
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Datasheet:
Price (USD)
25: USD 0.0529 ea
Line Total: USD 1.32 
Availability : 0
  
QtyUnit Price
25$ 0.0529
100$ 0.0475
425$ 0.0367
1175$ 0.0353

Availability 0
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 25
Multiples : 25
QtyUnit Price
25$ 0.0529
100$ 0.0475
425$ 0.0367
1175$ 0.0353

   
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Category
Mounting
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We are delighted to provide the DTA123YUA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA123YUA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The DTA123YUA is a transistor made by Luguang, with the following parameters: PNP bipolar type with a maximum voltage rating of 50V, a current rating of 0.1A, and a power rating of 200mW. It is packaged in the compact SOT323 package, and features a built-in source resistore of 2.2kO. This transistor is ideal for a variety of applications, such as amplifying small signals, switching applications, and general-purpose power control.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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