MDD14N25CRH Magnachip

MDD14N25CRH electronic component of Magnachip
MDD14N25CRH Magnachip
MDD14N25CRH MOSFETs
MDD14N25CRH  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MDD14N25CRH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MDD14N25CRH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. MDD14N25CRH
Manufacturer: Magnachip
Category: MOSFETs
Description: MOSFET N Trench 250V 10.2A 4V @ 250uA 280 mΩ @ 5.1A,10V TO-252-2 (DPAK) RoHS
Datasheet:
Price (USD)
1: USD 0.6622 ea
Line Total: USD 0.66 
Availability : 0
  
QtyUnit Price
1$ 0.6622
10$ 0.5502
30$ 0.4699
100$ 0.4042
500$ 0.392
1000$ 0.3872
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MDD14N25CRH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDD14N25CRH and other electronic components in the MOSFETs category and beyond.

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The Magnachip MDD14N25CRH is a Trench-type N-channel MOSFET with a low on-state resistance, high current capacity, low gate charge, and low gate to source leakage current. This component is manufactured in a TO-252-2 (DPAK) package and is compliant with RoHS standards. The voltage rating for this component is 250V and the maximum allowed current is 10.2A. The gate threshold voltage is approximately 4V, with a gate-source leakage current of 250uA and a source-drain resistance of 280mohm at 5.1A and 10V. This advanced MOSFET technology is an ideal choice for high power applications, where low switching losses, low noise, and high efficiency are desired.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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