MDU1512RH Magnachip

MDU1512 Single N-Channel Trench MOSFET 30V MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4 m General Description Features The MDU1512 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 100.0A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) < 3.4m V = 10V quality. MDU1512 is suitable device for DC to DC GS converter and general purpose applications. < 5.0m V = 4.5V GS 100% UIL Tested 100% Rg Tested D D D D D D D D D G S S S G G S S S PowerDFN56 S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 64 C o T =70 C 86.3 C (1) Continuous Drain Current I A D o (3) T =25 C 30.4 A o (3) T =70 C 24.2 A I DM Pulsed Drain Current 256 A o T =25 C 69.4 C o T =70 C 44.4 C Power Dissipation P W D o (3) T =25 C 5.5 A o (3) T =70 C 3.5 A (2) Single Pulse Avalanche Energy EAS 136 mJ o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient Steady State R 22.7 JA o C/W Thermal Resistance, Junction-to-Case Steady State R 1.8 JC 1 Apr. 2016. Version 1.5 MagnaChip Semiconductor Ltd. MDU1512 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDU1512RH -55~150 C PowerDFN56 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T = 25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.9 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current IDSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 24A - 3.0 3.4 GS D o Drain-Source ON Resistance R T =125 C - 4.4 4.9 m DS(ON) J V = 4.5V, I = 20A - 4.2 5.0 GS D Forward Transconductance g V = 5V, I = 10A - 42 - S fs DS D Dynamic Characteristics Total Gate Charge Q 26.5 35.3 44.1 g(10V) Total Gate Charge Q 12.6 16.8 21.0 g(4.5V) V = 15V, I = 24A, DS D nC V = 10V GS Gate-Source Charge Q - 7.0 - gs Gate-Drain Charge Q - 5.4 - gd Input Capacitance C 1615 2153 2691 iss V = 15V, V = 0V, DS GS Reverse Transfer Capacitance C 157 209 261 pF rss f = 1.0MHz Output Capacitance C 337 449 561 oss Turn-On Delay Time t - 12.2 - d(on) Rise Time t - 12.2 - r V = 10V, V = 15V, GS DS ns I = 24A, R = 3.0 D G Turn-Off Delay Time t - 39.4 - d(off) Fall Time t - 10.3 - f Gate Resistance Rg f=1 MHz - 1.0 2.0 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 24A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 29.1 43.7 ns rr I = 24A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 21.2 31.8 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25 , L = 0.1mH, I =.29.0A, V = 27V, V = 10V. AS AS DD GS 3. T < 10sec. 2 Apr. 2016. Version 1.5 MagnaChip Semiconductor Ltd.