MDU1515URH

MDU1515 Single N-Channel Trench MOSFET 30V MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2 m General Description Features The MDU1515 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 57.4A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) < 7.2 m V = 10V quality. MDU1515 is suitable device for DC/DC Converter GS and general purpose applications. < 11.0 m V = 4.5V GS 100% UIL Tested 100% Rg Tested D D D D D D D D D G S S S G G S S S PowerDFN56 S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 57.4 C o T =70 C 45.9 C (1) Continuous Drain Current I A D o (3) T =25 C 20.8 A o (3) TA=70 C 16.6 Pulsed Drain Current I 100 A DM o T =25 C 41.6 C o T =70 C 26.6 C Power Dissipation P W D o (3) T =25 C 5.5 A o (3) T =70 C 3.5 A (2) Single Pulse Avalanche Energy E 65.0 mJ AS o Junction and Storage Temperature Range TJ, Tstg -55~150 C Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 22.7 JA o C/W Thermal Resistance, Junction-to-Case R 3.0 JC 1 Feb. 2014. Version 1.3 MagnaChip Semiconductor Ltd. MDU1515 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDU1515URH -55~150 C PowerDFN56 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.3 1.9 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 16A - 6.3 7.2 GS D o Drain-Source ON Resistance R T =125 C - 9.1 10.5 m DS(ON) J V = 4.5V, I = 13A - 9.2 11.0 GS D Forward Transconductance g V = 5V, I = 10A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q 13.1 17.5 21.9 g(10V) Total Gate Charge Q 6.3 8.4 10.5 g(4.5V) V = 15.0V, I = 16A, DS D nC V = 10V GS Gate-Source Charge Q - 3.6 - gs Gate-Drain Charge Q - 2.8 - gd Input Capacitance C 816 1088 1360 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 79 105 131 pF rss f = 1.0MHz Output Capacitance C 164 218 273 oss Turn-On Delay Time t - 3.0 - d(on) Rise Time t - 8.6 - r V = 10V, V = 15.0V, GS DS ns I = 16A , R = 3.0 D G Turn-Off Delay Time t - 24.3 - d(off) Fall Time t - 8.2 - f Gate Resistance Rg f=1 MHz 1.0 3.0 4.5 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 16A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 24.9 37.4 ns rr IF = 16A, dl/dt = 100A/s Body Diode Reverse Recovery Charge Q - 16.5 24.8 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25 , L = 0.1mH, I = 18A, V = 27V, V = 10V AS AS DD GS 3. T < 10sec. 2 Feb. 2014. Version 1.3 MagnaChip Semiconductor Ltd.