Product Information

APT35GP120BG

APT35GP120BG electronic component of Microchip

Datasheet
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 20.897 ea
Line Total: USD 20.9

28 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
28 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

APT35GP120BG
Microchip

1 : USD 20.605
3 : USD 19.487

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Technology
Technology
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Turn-On Time
Turn-Off Time
Collector Current
Gate-Emitter Voltage
Gate Charge
Collector-Emitter Voltage
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Additional Infomation About Product

TechnologyThe Microchip Technology APT35GP120BG is an insulated-gate bipolar transistor (IGBT) with PT power MOS 7 single module. It is designed for power electronic, automotive, and industrial applications. This power device is capable of delivering a maximum 12A average current with a maximum peak current of up to 35A. It also has a maximum blocking voltage of 1200V with a typical collector-emitter saturation voltage of 2.2V. This device integrates both a field stop layer and Trench IGBT Structure and features an integrated fast body diagnostic circuitry for protecting against short circuit, over current and over temperature environments.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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