DN1509 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description High-input impedance This low threshold, depletion-mode, normally-on, tran- Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal Fast switching speeds Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This com- Low on-resistance bination produces a device with the power-handling Free from secondary breakdown capabilities of bipolar transistors, plus the high-input Low input and output leakages impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices. Applications Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced second- Normally-on switches ary breakdown. Battery operated systems Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- Linear amplifiers ally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high Constant current sources breakdown voltage, high input impedance, low input Telecom capacitance, and fast switching speeds are desired. 2015 Microchip Technology Inc. DS20005403B-page 1DN1509 Package Type SOURCE DRAIN GATE SOURCE N/C DRAIN DRAIN GATE N/C 5-lead SOT-23 TO-243AA (SOT-89) See Table 2-1 for pin information DS20005403B-page 2 2015 Microchip Technology Inc.