The ME45P04 MOSFET P Trench device manufactured by MQTSUKI is a TO-252-2 (DPAK) RoHS-compliant, surface-mount RF power transistor. It has a maximum drain-source voltage rating of 40V, a maximum current of 30A (Tc) at 3V, and a drain-source on-state resistance of 18 mO at 12A, 10V. With its high power handling capabilities and low on-state resistance, this MOSFET is an ideal choice for DC/DC converter, amplifiers, DC/AC inverters, and other high power applications.