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NCE6080K

NCE6080K electronic component of NCE Power
Part No.NCE6080K
Manufacturer: NCE Power
Category:MOSFET
Description: MOSFET N Trench 60V 80A (Tc) 4V @ 250uA 8.5 mΩ @ 20A,10V TO-252 RoHS
Datasheet: NCE6080K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3921 ea
Line Total: USD 1.96

20331 - Global Stock
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1164 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 5
Multiples : 5
5 : USD 0.3494
50 : USD 0.2848
150 : USD 0.2572
500 : USD 0.2226
2500 : USD 0.2072
5000 : USD 0.1981

We proudly offer the NCE6080K MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NCE6080K MOSFET.
     
Manufacturer
Product Category
Category
Rohs
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Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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The NCE6080K is an N-Channel MOSFET manufactured by NCE Power. It has a Trench 60V 80A (Tc) 4V @ 250uA 8.5 mΩ @ 20A,10V TO-252 RoHS package. The NCE6080K is a highly efficient power switching device designed for use in power management, such as DC/DC converters, motor drives, and portable applications. It features an enhanced body diode current capability, low gatedrive power and small footprint, making it ideal for high-efficiency, high-reliability designs. It has a maximum drain-source voltage of 60V and a maximum drain current of 80A with a low 4V threshold and 250uA typical gate current that allows for highly efficient and fast switching. The low passage resistance of 8.5 mΩ @ 20A,10V ensures minimal power losses. This device also comes with RoHS compliant TO-252 package, allowing for improved thermal performance in applications where space is a constraint.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wuxi NCE Power Semiconductor

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