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BSH205G2AR Nexperia
S08 S08 Microcontroller IC 8-Bit 40MHz 60KB (60K x 8) FLASH 64-LQFP (10x10) Stock : 3388
85V 250mW Dual Common Cathode 1.1V@100mA 4ns 215mA SOT-23 Switching Diode ROHS Stock : 670
ARM® Cortex®-M4 Kinetis K40 Microcontroller IC 32-Bit Single-Core 100MHz 128KB (128K x 8) FLASH 144-MAPBGA (13x13) Stock : 0
Rectifiers 85V 215mA Stock : 42000
Bipolar (BJT) Transistor NPN 20 V 30 mA 260MHz 250 mW Surface Mount TO-236AB Stock : 895
RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN Stock : 4124
Transistors RF Bipolar TRANS HV TAPE-7 Stock : 4513
RF Bipolar Transistors TRANS MED FREQ Stock : 2354
Rectifiers BAW156/TO-236AB/REEL 11" Q3/T4 Stock : 16092
Rectifiers DIODE LOW LEAKAGE Stock : 2990
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R Stock : 81
Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R Stock : 0
MOSFET N Ch Dep Mode FET 250V Stock : 1416
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R Stock : 88
MOSFET T1 20V P-CH SOT-1123 Stock : 8000
MOSFET Transistor - N Channel - 450 mA - 60 V - 2 ohm - 10 V - 2.4 V. Stock : 1953
MOSFET N-Channel - 100V - 100mA - 330mW - Surface Mount - SOT-23-3. Stock : 120000
Trans MOSFET N-CH 60V 2.5A 4-Pin(3+Tab) SOT-89 T/R Stock : 10263
MOSFET Transistor - N Channel - 150 mA - 60 V - 5 ohm - 10 V - 2.4 V. Stock : 69000
20V N-Channel 2.5Vgs Specified PowerTrench® MOSFET Stock : 2805
BSH205G2A 20 V, P-channel Trench MOSFET 13 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Extended temperature range T = 175 C j Trench MOSFET technology Very fast switching AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -2.6 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.6 A T = 25 C - 97 118 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia BSH205G2A 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source G 3 D drain S 1 2 017aaa094 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSH205G2A SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 Q8% BSH205G2A 1 % = placeholder for manufacturing site code BSH205G2A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 13 October 2020 2 / 15