BUK4D110-20PX Nexperia

BUK4D110-20P 20 V, P-channel Trench MOSFET 7 July 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range T = 175 C j Trench MOSFET technology Very fast switching Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) AEC-Q101 qualified 3. Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C - - -6.7 A D GS sp P total power dissipation T = 25 C - - 7.5 W tot sp Static characteristics R drain-source on-state V = -4.5 V I = -3.4 A T = 25 C - 88 110 m DSon GS D j resistanceNexperia BUK4D110-20P 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 3 G gate G 3 4 4 S source 8 5 D drain Transparent top view 6 D drain DFN2020MD6 (SOT1220) S 017aaa259 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK4D110-20P DFN2020MD6 plastic, leadless thermal enhanced ultra thin small outline SOT1220 package with side-wettable flanks (SWF) 6 terminals 0.65 mm pitch 2 mm x 2 mm x 0.65 mm body 7. Marking Table 4. Marking codes Type number Marking code BUK4D110-20P 6N BUK4D110-20P All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 7 July 2020 2 / 15