BUK9M31-60ELX Nexperia

BUK9M31-60ELX electronic component of Nexperia
BUK9M31-60ELX Nexperia
BUK9M31-60ELX MOSFETs
BUK9M31-60ELX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9M31-60ELX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9M31-60ELX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9M31-60ELX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET SINGLE N-CHANNEL 60 V, 21 MOHM
Datasheet: BUK9M31-60ELX Datasheet (PDF)
Price (USD)
1: USD 1.375 ea
Line Total: USD 1.38 
Availability : 2265
  
Ship by Wed. 27 Aug to Fri. 29 Aug
QtyUnit Price
1$ 1.375
10$ 0.816
100$ 0.4961
500$ 0.3949
1000$ 0.3036
1500$ 0.2937
3000$ 0.2673
9000$ 0.2552
24000$ 0.2541

Availability 1340
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3392
10$ 1.0742
30$ 0.706
100$ 0.548
500$ 0.494
1500$ 0.4678


Availability 2265
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.375
10$ 0.816
100$ 0.4961
500$ 0.3949
1000$ 0.3036
1500$ 0.2937
3000$ 0.2673
9000$ 0.2552
24000$ 0.2541

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
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We are delighted to provide the BUK9M31-60ELX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9M31-60ELX and other electronic components in the MOSFETs category and beyond.

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BUK9M31-60EL Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology 7 April 2022 Product data sheet 1. General description Single, logic level, N-channel MOSFET in LFPAK33 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 C Enhanced SOA technology for improved linear mode performance LFPAK copper clip package technology: High robustness and current handling capability Gull wing leads for easy AOI inspection and exceptional board level reliability 3. Applications 12 V automotive systems Airbag squib voltage regulator MOSFET 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 35 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 70.2 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C 11.6 16.5 20.6 m DSon GS D j resistance Fig. 13 Dynamic characteristics Q gate-drain charge I = 10 A V = 48 V V = 5 V - 6 11.9 nC GD D DS GS T = 25 C Fig. 15 Fig. 16 j 1 35 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature.Nexperia BUK9M31-60EL Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 2 S source D 3 S source 4 G gate G mb D Mounting base connected mbb076 S to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M31-60EL LFPAK33 Plastic, single ended surface mounted package SOT1210 (LFPAK33) 8 leads 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code 9316EL BUK9M31-60EL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).T = 25 C unless otherwise stated. j Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V gate-source voltage T = 175 C -10 10 V GS j P total power dissipation T = 25 C Fig. 1 - 70.2 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 35 A D GS mb V = 10 V T = 100 C Fig. 2 - 27 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 155 A DM p mb Fig. 4 T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature Source-drain diode I source current T = 25 C - 35 A S mb I peak source current pulsed t 10 s T = 25 C - 155 A SM p mb BUK9M31-60EL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2022. All rights reserved Product data sheet 7 April 2022 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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