BUK9Y8R8-60ELX Nexperia

BUK9Y8R8-60EL Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology 8 April 2022 Product data sheet 1. General description Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 C Enhanced SOA technology for improved linear mode performance LFPAK copper clip package technology: High robustness and current handling capability Gull wing leads for easy AOI inspection and exceptional board level reliability 3. Applications 12 V automotive systems Airbag squib voltage regulator MOSFET 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 110 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 194 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 3.1 4.4 5.6 m DSon GS D j resistance Fig. 13 Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 4.5 V - 18.2 36.4 nC GD D DS GS T = 25 C Fig. 15 Fig. 16 j 1 110 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature.Nexperia BUK9Y8R8-60EL Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb 2 S source D 3 S source G 4 G gate mb D mounting base connected 1 2 3 4 mbb076 S to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y8R8-60EL LFPAK56 plastic, single-ended surface-mounted package 4 SOT669 Power-SO8 terminals 7. Marking Table 4. Marking codes Type number Marking code 98E860L BUK9Y8R8-60EL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Tj = 25 C unless otherwise stated. Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V gate-source voltage DC T 175 C -10 10 V GS j P total power dissipation T = 25 C Fig. 1 - 194 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 110 A D GS mb V = 10 V T = 100 C Fig. 2 - 87 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 493 A DM p mb Fig. 4 T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C - 110 A S mb I peak source current pulsed t 10 s T = 25 C - 493 A SM p mb Avalanche ruggedness E non-repetitive drain- I = 62.3 A V 60 V R = 50 2 3 - 195 mJ DS(AL)S D sup GS source avalanche energy V = 10 V T = 25 C unclamped GS j(init) t = 76 s Fig. 5 p BUK9Y8R8-60EL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2022. All rights reserved Product data sheet 8 April 2022 2 / 12