Product Information

PMBF170,235

PMBF170,235 electronic component of Nexperia

Datasheet
MOSFET N-channel TrenchMOS intermed level FET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5278 ea
Line Total: USD 0.53

54568 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
30829 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMBF170,235
Nexperia

1 : USD 0.3692
10 : USD 0.2519
100 : USD 0.1024
1000 : USD 0.0633
2500 : USD 0.0575
10000 : USD 0.0425
50000 : USD 0.0414
100000 : USD 0.0403

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMBF170 N-channel enhancement mode eld-effect transistor Rev. 03 23 June 2000 Product specication 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using 1 TrenchMOS technology. Product availability: PMBF170 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Relay driver High speed line driver c c Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 03ab44 03ab30 s 12 SOT23 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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