PMPB24EPX Nexperia

PMPB24EP 30 V, P-channel Trench MOSFET 22 October 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - - -9.5 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -6.4 A T = 25 C - 24 28 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMPB24EP 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 G 3 G gate 3 4 4 S source 8 S 5 D drain 017aaa094 Transparent top view 6 D drain DFN2020MD-6 (SOT1220) 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB24EP DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB24EP 6E PMPB24EP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 22 October 2018 2 / 14