Product Information

PMZB1200UPEYL

PMZB1200UPEYL electronic component of Nexperia

Datasheet
P-Channel 30 V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3599 ea
Line Total: USD 0.36

17975 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

PMZB1200UPEYL
Nexperia

1 : USD 0.9347
10 : USD 0.7857
30 : USD 0.711
100 : USD 0.6366
500 : USD 0.5923
1000 : USD 0.5701

17975 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMZB1200UPEYL
Nexperia

1 : USD 0.3599
10 : USD 0.2507
100 : USD 0.1035
1000 : USD 0.0667
2500 : USD 0.0644
10000 : USD 0.0449
20000 : USD 0.0425

Read More Specifications

     
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RoHS - XON
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Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Ultra thin package profile of 0.37 mm height 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -410 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -410 mA T = 25 C - 1.2 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZB1200UPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB1200UPE DFN1006B-3 DFN1006B-3: leadless ultra small plastic package 3 solder SOT883B lands body 1.0 x 0.6 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMZB1200UPE 0101 0110 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB1200UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 25 March 2015 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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