Product Information

PMZ950UPEYL

Hot PMZ950UPEYL electronic component of Nexperia

Datasheet
P-Channel 20 V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount SOT-883

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

170: USD 0.0576 ea
Line Total: USD 9.79

19400 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 170  Multiples: 1
Pack Size: 1
Availability Price Quantity
8560 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

PMZ950UPEYL
Nexperia

5 : USD 0.1145
50 : USD 0.0932
150 : USD 0.0775
500 : USD 0.0733
2500 : USD 0.0701
5000 : USD 0.0683

8069 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PMZ950UPEYL
Nexperia

1 : USD 0.3692
10 : USD 0.2357
100 : USD 0.0943
1000 : USD 0.0701
2500 : USD 0.0609
10000 : USD 0.0587
20000 : USD 0.0506
50000 : USD 0.0483
100000 : USD 0.0471

19400 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 170
Multiples : 1

Stock Image

PMZ950UPEYL
Nexperia

170 : USD 0.0576
1000 : USD 0.0517
2500 : USD 0.0451
10000 : USD 0.0442

18340 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 149
Multiples : 1

Stock Image

PMZ950UPEYL
Nexperia

149 : USD 0.4317
250 : USD 0.4308
500 : USD 0.4299
1000 : USD 0.4292
3000 : USD 0.4205

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 0.6 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 1.02 DSon 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZ950UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZ950UPE DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ950UPE ZT PMZ950UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 July 2014 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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