Product Information

PSMN5R6-100XS,127

PSMN5R6-100XS,127 electronic component of NXP

Datasheet
Trans MOSFET N-CH 100V 61.8A 3-Pin(3+Tab) TO-220F Rail
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8: USD 4.2267 ea
Line Total: USD 33.81

0 - Global Stock
MOQ: 8  Multiples: 1
Pack Size: 1

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Additional Infomation About Product

PSMN5R6-100XS N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A) Rev. 3 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Isolated package and conduction losses Suitable for standard level gate drive 1.3 Applications AC-to-DC power supply equipment Server power supplies Motor control Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 100 V DS j j I drain current T =25 C; V =10V; see Figure 1 - - 61.8 A D mb GS P total power dissipation T =25 C; see Figure 2 --60 W tot mb Static characteristics R drain-source on-state resistance V =10V; I =15A; T =25C; -4.3 5.6 m DSon GS D j see Figure 12; see Figure 13 Dynamic characteristics Q gate-drain charge V =10V; I =15A; V =50V; see - 41.2 - nC GD GS D DS Figure 14; see Figure 15 Q total gate charge - 145 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V; T =25C; I = 61.8 A; - - 550 mJ DS(AL)S GS j(init) D avalanche energy V 100 V; unclamped; R =50 ; sup GS see Figure 3 TO-220FPSMN5R6-100XS NXP Semiconductors N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A) 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb mounting base; isolated mbb076 S 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R6-100XS TO-220F plastic single-ended package; isolated heatsink mounted; SOT186A 1 mounting hole; 3-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 175 C - 100 V DS j j V drain-gate voltage T 25 C; T 175 C; R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10 V; T =25C; see Figure 1 - 61.8 A D GS mb V =10 V; T = 100 C; see Figure 1 - 43.7 A GS mb I peak drain current pulsed; t 10 s; T =25C; see Figure 4 - 247 A DM p mb P total power dissipation T =25C; see Figure 2 -60 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 50 A S mb I peak source current pulsed; t 10 s; T = 25 C - 247 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10 V; T =25C; I =61.8 A; V 100 V; - 550 mJ DS(AL)S GS j(init) D sup avalanche energy unclamped; R =50 ; see Figure 3 GS PSMN5R6-100XS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 6 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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