Product Information

PSMN4R5-40PS,127

PSMN4R5-40PS,127 electronic component of Nexperia

Datasheet
MOSFET N-CH 40V 4.6 mOhm Standard MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7365 ea
Line Total: USD 1.74

6358 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
47 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.6301
10 : USD 1.4292
30 : USD 1.3096
100 : USD 1.1892
500 : USD 1.1339
1000 : USD 1.1087

6358 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.7365
10 : USD 1.3225
100 : USD 1.1465
500 : USD 1.0695
1000 : USD 0.9821
2500 : USD 0.9775

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
PSMN5R0-100PS,127 electronic component of NXP PSMN5R0-100PS,127

MOSFET N-Ch 100V 5 mOhms
Stock : 0

PSMN5R0-100ES,127 electronic component of Nexperia PSMN5R0-100ES,127

Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) I2PAK Rail
Stock : 0

PSMN5R0-100ES electronic component of Nexperia PSMN5R0-100ES

MOSFET, N CH, 100V, 120A, SOT226
Stock : 0

PSMN4R6-60PS,127 electronic component of Nexperia PSMN4R6-60PS,127

MOSFET N-CH 60V STD LEVEL MOSFET
Stock : 1005

PSMN4R6-60PS electronic component of NXP PSMN4R6-60PS

MOSFET,N CH,60V,100A,TO-220AB
Stock : 0

PSMN4R6-60BS,118 electronic component of Nexperia PSMN4R6-60BS,118

N-Channel 60 V 100A (Tc) 211W (Tc) Surface Mount D2PAK
Stock : 7090

PSMN5R0-30YL,115 electronic component of Nexperia PSMN5R0-30YL,115

MOSFET <=30V N CH TRENCHFET
Stock : 11940

PSMN4R8-100BSEJ electronic component of Nexperia PSMN4R8-100BSEJ

MOSFET N-channel 100 V 4.8 mo FET
Stock : 12313

PSMN4R8-100BSE electronic component of Nexperia PSMN4R8-100BSE

MOSFET, N-CH, 100V, 120A, D2PAK
Stock : 0

PSMN5R0-30YL.115 electronic component of Nexperia PSMN5R0-30YL.115

Transistor: N-MOSFET; unipolar; 30V; 64A; 61W; LFPAK33
Stock : 0

Image Description
PSMN4R5-40BS,118 electronic component of Nexperia PSMN4R5-40BS,118

MOSFET Std N-chanMOSFET
Stock : 3973

PSMN4R4-80PS,127 electronic component of Nexperia PSMN4R4-80PS,127

Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W; TO220AB
Stock : 13

PSMN4R4-80BS,118 electronic component of Nexperia PSMN4R4-80BS,118

MOSFET Std N-chanMOSFET
Stock : 4442

PSMN4R3-30BL,118 electronic component of Nexperia PSMN4R3-30BL,118

MOSFET Std N-chanMOSFET
Stock : 9596

PSMN4R1-30YLC,115 electronic component of Nexperia PSMN4R1-30YLC,115

NXP Semiconductors MOSFET N-Ch 30V 4.35mOhms
Stock : 0

PSMN4R0-30YLDX electronic component of Nexperia PSMN4R0-30YLDX

MOSFET MOSFET N-CH 30V LFPAK
Stock : 25489

PSMN3R8-100BS,118 electronic component of Nexperia PSMN3R8-100BS,118

NXP Semiconductors MOSFET Std N-chanMOSFET
Stock : 3685

PSMN3R7-30YLC,115 electronic component of NXP PSMN3R7-30YLC,115

MOSFET N-Ch 30V 3.95mOhms
Stock : 0

PSMN3R5-30YL,115 electronic component of Nexperia PSMN3R5-30YL,115

NXP Semiconductors MOSFET <=30V N CH TRENCHFET
Stock : 4490

PSMN3R4-30BL,118 electronic component of Nexperia PSMN3R4-30BL,118

MOSFET Std N-chanMOSFET
Stock : 0

PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 148 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =25A -8.8 -nC GD GS D V = 20 V see Figure 14 DS see Figure 15 Static characteristics R drain-source V =10V I =25A 1 -3.9 4.6 m DSon GS D on-state resistance T = 25 C see Figure 13 j 1 Measured 3 mm from package.Nexperia PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R5-40PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -40 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -96 A D GS mb V =10V T =25C see Figure 1 -100 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -545 A DM p mb P total power dissipation T =25C see Figure 2 -148 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 100 A S mb I peak source current t 10 s pulsed T =25C - 545 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =100 A V 40 V -152 mJ DS(AL)S GS j(init) D sup avalanche energy unclamped R =50 GS Nexperia B.V. 2017. All rights reserved PSMN4R5-40PS 2 Product data sheet Rev. 02 25 June 2009 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted