PXN9R0-30QLJ Nexperia

PXN9R0-30QL 30 V, N-channel Trench MOSFET 5 January 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology MLPAK33 package (3.3 x 3.3 mm footprint) 3. Applications DC-to-DC converters Battery management Low-side load-switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 17.3 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 11.4 A T = 25 C - 7.7 9.1 m DSon GS D j resistance V = 4.5 V I = 10.1 A T = 25 C - 9.3 11.6 m GS D j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PXN9R0-30QL 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 3 4 1 S source D 2 S source G 3 S source 4 G gate mbb076 S 5 D drain 6 D drain 8 7 6 5 7 D drain MLPAK33 (SOT8002-1) 8 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PXN9R0-30QL MLPAK33 plastic thermal enhanced surface mounted package mini leads SOT8002-1 8 terminals pitch 0.65 mm 3.3 x 3.3 x 0.8 mm body 7. Marking Table 4. Marking codes Type number Marking code 7AM PXN9R0-30QL PXN9R0-30QL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 5 January 2021 2 / 14