NTE2916 NTE

NTE2916 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type Package D Features: Advanced Process Technology Dynamic dv/dt Rating +175 C Operating Temperature Fast Switching G Fully Avalanche Rated Ease of Paralleling S Description: The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO220 devices. Th TO247 is similar, but superior, to the TO218 package because of its isolated mounting hole. Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 50A C T = +100 C ................................................................. 35A C Pulsed Drain Current (Note 1), I .................................................. 200A DM Power Dissipation (T = +25 C), P ................................................ 300W C D Derate Linearly Above 25 C ............................................... 2.0W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 560mJ AS Avalanche Current (Note 1), I ...................................................... 50A AR Repetitive Avalanche Energy (Note 1), E .......................................... 30mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 10V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.50 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. Starting T = +25 C, L = 1.5mH, R = 25 , I = 28A J G AS Note 3. I 28A, di/dt 486A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 200 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.26 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 28A, Note 4 0.04 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 28A 27 mhos fs DS D DraintoSource Leakage Current I V = 200V, V = 0V 25 A DSS DS GS V = 160V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 28A, V = 160V, V = 10V, 234 nC g D DS GS Note 4 GatetoSource Charge Q 38 nC gs GatetoDrain (Miller) Charge Q 110 nC gd TurnOn Delay Time t 17 ns V = 100V, I = 28A, R = 1.8 , d(on) DD D G V = 10V, Note 4 GS Rise Time t 60 ns r TurnOff Delay Time t 55 ns d(off) Fall Time t 48 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 5.0 nH D package and center of die contact Internal Source Inductance L 13 nH S Input Capacitance C 4057 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 603 pF oss Reverse Transfer Capacitance C 161 pF rss Note 4. Pulse width 400 s duty cycle 2%. Source Drain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I Note 5 50 A S Pulsed Source Current (Body Diode) I Note 1 200 A SM Diode Forward Voltage V T = +25 C, I = 28A, V = 0V, 1.3 V SD J S GS Note 4 Reverse Recovery Time t T = +25 C, I = 28A, 268 402 ns rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 1.9 2.8 C rr Forward TurnOn Time t Intrinsic turnon time is negligible (turnon is dominated by L + L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 400 s duty cycle 2%. Note 5. Calculated continuous current based on maximum allowable junction temperature.