NTE2920 NTE

NTE2920 MOSFET NCh, Enhancement Mode High Speed Switch D TO3P Type Package Features: Drain Current: I = 70A at T = +25C D C Drain Source Voltage: V = 60V Min DSS G Static Drain Source OnResistance: R = 0.014 Max DS(on) Fast Switching S Absolute Maximum Ratings: (T = +25C unless otherwise specified) A DrainSource Voltage, V ......................................................... 60V DSS Continuous Gate Source Voltage, V ............................................... 20V GS Continuous Drain Current, I D T = +25C .................................................................. 70A C T = +100C ................................................................. 64A C Single Pulse Drain Current, I ..................................................... 360A DM Power Dissipation (T = +25C), P ................................................ 230W C D Operating Junction Temperature Range, T .................................. 55 to +175C J Storage Temperature Range, T .......................................... 55 to +175C stg Thermal Resistance, Junction toCase, R .................................... 0.65 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0V, I = 250A 60 V (BR)DSS GS D Gate Threshold Voltage V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D DrainSource OnResistance R V = 10V, I = 54A 0.014 DS(on) GS D GateSource Body Leakage Current I V = 20V, V = 0V 100 nA GSS GS DS Zero Gate Voltage Drain Current I V = 60V, V = 0V 25 A DSS DS GS Forward ONVoltage V I = 90A, V = 0V 2.5 V SD S GS Forward Transconductance g V = 25V, I = 54A 25 S fs DS D Rev. 1115Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Total Gate Charge Q 160 nC I = 64A, V = 48V, V = 10V, g D DS GS Note 1 GatetoSource Charge Q 48 nC gs GatetoDrain (Miller) Charge Q 54 nC gd TurnOn Delay Time t 20 ns V = 30V, I = 64A, R = 6.2, d(on) DD D G R = 0.45, Note 1 D Rise Time t 160 ns r TurnOff Delay Time t 83 ns d(off) Fall Time t 150 ns f Internal Drain Inductance L 5.0 nH Between lead, .250in. (6.0) mm from D package and center of die contact Internal Source Inductance L 13 nH S Input Capacitance C V = 0V, V = 25V, f = 1MHz 4500 pF iss GS DS Output Capacitance C 2000 pF oss Reverse Transfer Capacitance C 300 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I Note 2 70 A S Pulsed Source Current (Body Diode) I Note 1 360 A SM Diode Forward Voltage V T = +25C, I = 90A, V = 0V, 2.5 V SD J S GS Note 3 Reverse Recovery Time t T = +25C, I = 64A, 270 540 ns rr J F di/dt = 100A/ s, Note 1 Reverse Recovery Charge Q 1.1 2.2 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Pulse width 300 s duty cycle 2%. Note 2. Current limited by the package, (Die Current = 90A). Note 3. Repetitive rating pulse width limited by maximum junction temperature.