NTE2921 NTE

NTE2921 electronic component of NTE
NTE2921 NTE
NTE2921 MOSFETs
NTE2921  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE2921 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2921 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTE2921
Manufacturer:NTE
Category:MOSFETs
Description:Transistor: N-MOSFET; 250V; 15A; TO247
Datasheet:NTE2921 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
5: USD 16.8 ea
Line Total: USD 84 
Availability : 0
  
QtyUnit Price
5$ 16.8
50$ 10.824
100$ 9.984
200$ 9.276
500$ 8.652
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 16.8
50$ 10.824
100$ 9.984
200$ 9.276
500$ 8.652


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 19.4492
2$ 12.7098
4$ 12.0163

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2921 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2921 and other electronic components in the MOSFETs category and beyond.

ImagePart-Description
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ImagePart-Description
Stock ImageNTE2922
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Stock ImageNTE2923
Transistor: N-MOSFET; 500V; 8.8A; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2924
Transistor: N-MOSFET; 600V; 6.8A; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2930
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Stock ImageNTE2932
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Stock ImageNTE2933
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Stock ImageNTE2934
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Stock ImageNTE2935
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Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2936
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Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2921 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 15A C T = +100 C ................................................................ 9.7A C Pulsed Drain Current (Note 1), I ................................................... 60A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.2W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 550mJ AS Avalanche Current (Note 1), I ...................................................... 15A AR Repetitive Avalanche Energy (Note 1), E .......................................... 15mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.8V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.83 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, L = 3.9mH, R = 25 , I = 15A DD J G AS Note 3. I 15A, di/dt 150A/ s, V 250V, T +150 C SD DD J Rev. 1013Note 4. Pules Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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