Product Information

BF1102R,115

BF1102R,115 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

44: USD 0.8115 ea
Line Total: USD 35.71

0 - Global Stock
MOQ: 44  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Channel Mode
Rad Hardened
Application
Output Capacitance Typ Vds
Reverse Capacitance Typ
Noise Figure Max
Drain Source Voltage Max
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102 BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102 BF1102R FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102 BF1102R Specially designed for 5 V applications 1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC 2 gate 2 (1 and 2) source (1 and 2) High forward transfer admittance 3 drain (1) drain (1) High forward transfer admittance to input capacitance 4 drain (2) drain (2) ratio. 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional handbook, halfpage g (1, 2) 2 communications equipment. 6 5 4 DESCRIPTION g (1) AMP1 d (1) 1 The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and g (2) d (2) AMP2 substrate an internal bias circuit enables DC stabilization 1 and a very good cross-modulation performance at 5 V 132 supply voltage integrated diodes between the gates and BF1102 marking code: W1. BF1102R marking code: W2-. source protect against excessive input voltage surges. s (1, 2) MBL029 Both devices have a SOT363 micro-miniature plastic Fig.1 Simplified outline and symbol. package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified V drain-source voltage 7V DS I drain current (DC) 40 mA D P total power dissipation T 102 C note 1 200 mW tot s y forward transfer admittance I =15mA 36 43 mS fs D C input capacitance at gate 1 I =15mA 2.8 3.6 pF ig1-s D C reverse transfer capacitance f = 1 MHz 30 50 fF rss F noise figure f = 800 MHz 22.8 dB X cross-modulation input level for k = 1% at 40 dB AGC 100 dB V mod T operating junction temperature 150 C j Note 1. T is the temperature at the soldering point of the source lead. s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Apr 11 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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