Product Information

BFG590/X

BFG590/X electronic component of NXP

Datasheet
RF TRANSISTOR, NPN, SOT-143
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8612 ea
Line Total: USD 1.86

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.156
10 : USD 1.7035
100 : USD 1.3043
500 : USD 1.0494
1000 : USD 0.7832
5000 : USD 0.7303

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Termination Type
Transistor Case Style
Voltage Vcbo
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Additional Infomation About Product

BFG590 BFG590/X NPN 5 GHz wideband transistors Rev. 04 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistors BFG590 BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequency 1 collector collector Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 12 Top view MSB014 MARKING TYPE NUMBER CODE BFG590 %MH Fig.1 Simplified outline SOT143B. BFG590/X %MN QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I collector current (DC) -- 200 mA C P total power dissipation T 60 C -- 400 mW tot s h DC current gain I = 35 mA V=8V 5090280 FE C CE C feedback capacitance I = 0 V =8V f=1MHz - 0.7 - pF re C CE f transition frequency I = 80 mA V =4V f=1GHz - 5 - GHz T C CE G maximum unilateral power gain I = 80 mA V =4V - 13 - dB UM C CE f = 900 MHz T =25 C amb 2 S insertion power gain I = 80 mA V =4V - 11 - dB 21 C CE f = 900 MHz T =25 C amb Rev. 04 - 12 November 2007 2 of 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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