Product Information

BFG591

BFG591 electronic component of NXP

Datasheet
RF TRANSISTOR, NPN, SOT-223
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.152 ea
Line Total: USD 1.15

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 10
Multiples : 1

Stock Image

BFG591
NXP

10 : USD 1.0984
100 : USD 0.8067
500 : USD 0.6802
1000 : USD 0.4796
5000 : USD 0.4482

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage V Br Ceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No Of Transistors
Packaging
Power Dissipation Ptot Max
Smd Marking
Termination Type
Transistor Case Style
Voltage Vcbo
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transition frequency PINNING Gold metallization ensures excellent reliability. PIN DESCRIPTION 1emitter APPLICATIONS 2base Intended for applications in the GHz 123 3emitter range such as MATV or CATV Top view MSB002 - 1 4 collector amplifiers and RF communications subscriber equipment. Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I collector current (DC) 200 mA C P total power dissipation up to T =80 C note 1 2W tot s h DC current gain I =70mA V =8V 60 90 250 FE C CE C feedback capacitance I =I =0 V =12V f=1MHz 0.7 pF re C c CE f transition frequency I =70mA V =12V f=1GHz 7 GHz T C CE G maximum unilateral power I =70mA V =12V 13 dB UM C CE gain f= 900MHz T =25 C amb 2 insertion power gain I =70mA V =12V 12 dB C CE s 21 f= 900MHz T =25 C amb Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 04 2

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