BFR93AW,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification 1995 Sep 18 Supersedes data of November 1992NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION 3 handbook, 2 columns High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. Gold metallization ensures The BFR93AW uses the same crystal excellent reliability as the SOT23 version, BFR93A. SOT323 (S-mini) package. PINNING 12 APPLICATIONS PIN DESCRIPTION It is designed for use in RF amplifiers, Top view MBC870 1base mixers and oscillators with signal Marking code: R2. frequencies up to 1 GHz. 2emitter Fig.1 SOT323 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 35 mA C P total power dissipation up to T =93 C note 1 300 mW tot s h DC current gain I =30mA V =5 V 40 90 FE C CE C feedback capacitance I =0 V = 5 V f = 1 MHz 0.6 pF re C CE T =25 C amb f transition frequency I =30mA V =5 V f= 500MHz 4 5 GHz T C CE G maximum unilateral power I =30mA V =8 V f= 1GHz 13 dB UM C CE gain T =25 C amb I =30mA V =8 V f= 2GHz 8 dB C CE T =25 C amb Fnoise figure I =5 mA V = 8 V f = 1 GHz 1.5 dB C CE = s opt T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 18 2