Product Information

BFR93AW,115

BFR93AW,115 electronic component of NXP

Datasheet
Transistors RF Bipolar TAPE-7 TNS-RFSS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0948 ea
Line Total: USD 284.4

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 1
3000 : USD 0.0948
9000 : USD 0.0909

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification 1995 Sep 18 Supersedes data of November 1992NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION 3 handbook, 2 columns High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. Gold metallization ensures The BFR93AW uses the same crystal excellent reliability as the SOT23 version, BFR93A. SOT323 (S-mini) package. PINNING 12 APPLICATIONS PIN DESCRIPTION It is designed for use in RF amplifiers, Top view MBC870 1base mixers and oscillators with signal Marking code: R2. frequencies up to 1 GHz. 2emitter Fig.1 SOT323 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 35 mA C P total power dissipation up to T =93 C note 1 300 mW tot s h DC current gain I =30mA V =5 V 40 90 FE C CE C feedback capacitance I =0 V = 5 V f = 1 MHz 0.6 pF re C CE T =25 C amb f transition frequency I =30mA V =5 V f= 500MHz 4 5 GHz T C CE G maximum unilateral power I =30mA V =8 V f= 1GHz 13 dB UM C CE gain T =25 C amb I =30mA V =8 V f= 2GHz 8 dB C CE T =25 C amb Fnoise figure I =5 mA V = 8 V f = 1 GHz 1.5 dB C CE = s opt T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 18 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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