BFU668F,115 NXP

BFU668F,115 electronic component of NXP
BFU668F,115 NXP
BFU668F,115 Bipolar Transistors - BJT
BFU668F,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BFU668F,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BFU668F,115 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BFU668F,115
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN wideband silicon RF transistor
Datasheet: BFU668F,115 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0511
15000$ 0.0502
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9096
10$ 0.6432
100$ 0.1379
1000$ 0.106
3000$ 0.0936
9000$ 0.0884
24000$ 0.0858
45000$ 0.0845
99000$ 0.0818
N/A

Obsolete
   
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Product Category
RoHS - XON
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We are delighted to provide the BFU668F,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU668F,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BFU668F NPN wideband silicon RF transistor Rev. 3 24 January 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package offering an innovative Ku-band DRO solution. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits DROs with good output power and low phase noise at very low current consumption: 5 dBm and 55 dBc/Hz/1 kHz at 12 mA Low-noise, high gain for low cost LNA solutions 40 GHz f silicon technology T 1.3 Applications Ku-band DROs in Ku-band LNBs C-band, low current LNAsBFU668F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current - 15 40 mA C 1 P total power dissipation T 90 C -- 200mW tot sp h DC current gain I =10mA V =3.5 V 90 135 200 FE C CE T =25 C j C collector-base capacitance V = 2 V f = 1 MHz - 138 - fF CBS CB f transition frequency I =15mA V =3.5 V -20 - GHz T C CE f=2GHz T =25 C amb IP3 maximum output third-order I =15mA V =3.5 V -24 - dBm o(max) C CE intercept point f = 10 GHz T =25 C amb Z =Z =50 S L 2 G maximum power gain I =15mA V =3.5 V - 10.5 - dB p(max) C CE f = 10.0 GHz T =25 C amb NF noise figure I =15mA V =3.5 V -1.7 - dB C CE f = 10.0 GHz = S opt T =25 C amb P output power at 1 dB gain I =15mA V =3.5 V -12 - dBm L(1dB) C CE compression Z =Z =50 S L f = 10 GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 BFU668F All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 24 January 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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