BYC8D-600 NXP

BYC8D-600 Hyperfast power diode Rev. 01 27 December 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 1.2 Features and benefits Low reverse recovery current and low Reduces switching losses in thermal resistance associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Correction (PFC) power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse --600V RRM voltage I average forward current square-wave pulse = 0.5 --8 A F(AV) T 103 C see Figure 1 mb see Figure 2 Static characteristics V forward voltage I =8A T =25C - 2 2.9 V F F j I =8A T =150 C - 1.5 1.85 V F j see Figure 4 Dynamic characteristics t reverse recovery time I =8A V = 400 V -20 - ns rr F R dI /dt = 500 A/s F T = 25 C see Figure 5 j TO-220ACBYC8D-600 NXP Semiconductors Hyperfast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb mb mounting base connected to cathode 12 SOD59 (TO-220AC) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8D-600 TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage DC - 600 V R I average forward current square-wave pulse = 0.5 T 103 C -8 A F(AV) mb see Figure 1 see Figure 2 I repetitive peak forward current square-wave pulse = 0.5 t = 25 s -16 A FRM p T 103 C mb I non-repetitive peak forward t = 8.3 ms sine-wave pulse T =150 C - 60 A FSM p j(init) current t = 10 ms sine-wave pulse T = 150 C - 55 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYC8D-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 27 December 2010 2 of 11