Product Information

PSMN6R0-25YLDX

PSMN6R0-25YLDX electronic component of Nexperia

Datasheet
MOSFET PSMN6R0-25YLD/LFPAK/REEL 7" Q1
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7705 ea
Line Total: USD 0.77

1256 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1256 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

PSMN6R0-25YLDX
Nexperia

1 : USD 0.7705
10 : USD 0.6544
100 : USD 0.4554
500 : USD 0.3599
1000 : USD 0.3553
1500 : USD 0.2668
3000 : USD 0.2392
9000 : USD 0.2219
24000 : USD 0.2173

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN6R0-25YLD N-channel 25 V, 6.75 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 175 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 61 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 43 W tot mbNexperia PSMN6R0-25YLD N-channel 25 V, 6.75 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 10 A T = 25 C - 8.29 10.19 m DSon GS D j resistance Fig. 10 V = 10 V I = 15 A T = 25 C - 5.84 6.75 m GS D j Fig. 10 Dynamic characteristics Q total gate charge I = 15 A V = 12 V V = 10 V - 10.5 - nC G(tot) D DS GS Fig. 12 Fig. 13 I = 15 A V = 12 V V = 4.5 V - 4.9 - nC D DS GS Fig. 12 Fig. 13 I = 0 A V = 0 V V = 10 V - 5.6 - nC D DS GS Q gate-drain charge I = 15 A V = 12 V V = 4.5 V - 1.1 - nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 15 A dI /dt = -100 A/s V = 0 V - 1.1 - S S GS V = 12 V Fig. 16 DS 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R0-25YLD LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads PSMN6R0-25YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 April 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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