March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. R = 0.025 V =10V. These N-Channel enhancement mode power field effect DS(ON) GS transistors are produced using Fairchild s proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. process has been especially tailored to minimize on-state resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor. commutation modes. These devices are particularly suited 175C maximum junction temperature rating. for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery High density cell design for extremely low R . DS(ON) powered circuits where fast switching, low in-line power 2 loss, and resistance to transients are needed. TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. D G S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter NDP6060 NDB6060 Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1 M) DGR GS V Gate-Source Voltage - Continuous 20 V GSS - Nonrepetitive (t < 50 s) 40 P o I Drain Current - Continuous T =25 C 48 A D c o - Continuous T =100 C 32 C - Pulsed 144 P Total Power Dissipation T = 25C 100 W D C Derate above 25C 0.67 W/C T ,T Operating and Storage Temperature Range -65 to 175 C J STG T Maximum lead temperature for soldering purposes, 275 C L 1/8 from case for 5 seconds 1997 Fairchild Semiconductor Corporation NDP6060 Rev. B1 / NDB6060 Rev. CElectrical Characteristics (T = 25C unless otherwise noted) C Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W Single Pulse Drain-Source Avalanche V = 25 V, I = 48 A 200 mJ DSS DD D Energy Maximum Drain-Source Avalanche Current 48 A I AR OFF CHARACTERISTICS Drain-Source Breakdown Voltage 60 V BV V = 0 V, I = 250 A DSS GS D I Zero Gate Voltage Drain Current V = 60 V, V = 0 V 250 A DSS DS GS T = 125C 1 mA J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 2 2.9 4 V V V = V , I = 250 A GS(th) DS GS D 1.4 2.3 3.6 T = 125C J R Static Drain-Source On-Resistance V = 10 V, I = 24 A 0.02 0.025 DS(ON) GS D 0.032 0.04 T = 125C J I On-State Drain Current V = 10 V, V = 10 V 48 A D(on) GS DS g Forward Transconductance V = 10 V, I = 24 A 10 19 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance V = 25 V, V = 0 V, 1190 1800 pF C DS GS iss f = 1.0 MHz Output Capacitance 475 800 pF C oss C Reverse Transfer Capacitance 150 400 pF rss SWITCHING CHARACTERISTICS (Note 1) t Turn - On Delay Time V = 30 V, I = 48 A, 10 20 nS D(on) DD D V = 10 V, R = 7.5 GS GEN Turn - On Rise Time 145 300 nS t r t Turn - Off Delay Time 28 60 nS D(off) Turn - Off Fall Time 77 150 nS t f Q Total Gate Charge V = 48 V, 39 70 nC g DS I = 48 A, V = 10V D GS Q Gate-Source Charge 7.6 nC gs Q Gate-Drain Charge 22 nC gd NDP6060 Rev. B1 / NDB6060 Rev. C