NTF3055-100T3G ON Semiconductor

NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N Channel SOT223 NTF3055 100, NVF3055100 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS V Vdc DraintoSource Breakdown Voltage (Note 3) (BR)DSS 60 68 (V = 0 Vdc, I = 250 Adc) GS D 66 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current I 100 nAdc GSS (V = 20 Vdc, V = 0 Vdc) GS DS ON CHARACTERISTICS (Note 3) V Vdc Gate Threshold Voltage (Note 3) GS(th) 2.0 3.0 4.0 (V = V , I = 250 Adc) DS GS D 6.6 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) 88 110 (V = 10 Vdc, I = 1.5 Adc) GS D Static DraintoSource OnResistance (Note 3) V Vdc DS(on) 0.27 0.40 (V = 10 Vdc, I = 3.0 Adc) GS D 0.24 (V = 10 Vdc, I = 1.5 Adc, T = 150C) GS D J g 3.2 Mhos Forward Transconductance (Note 3) fs (V = 8.0 Vdc, I = 1.7 Adc) DS D DYNAMIC CHARACTERISTICS Input Capacitance C 324 455 pF iss (V = 25 Vdc, V = 0 V, DS GS Output Capacitance C 35 50 oss f = 1.0 MHz) Transfer Capacitance C 110 155 rss SWITCHING CHARACTERISTICS (Note 4) Turn On Delay Time t 9.4 20 ns d(on) (V = 30 Vdc, I = 3.0 Adc, Rise Time DD D t 14 30 r V = 10 Vdc, GS Turn Off Delay Time t 21 45 R = 9.1 ) (Note 3) d(off) G Fall Time t 13 30 f Gate Charge Q 10.6 22 nC T (V = 48 Vdc, I = 3.0 Adc, DS D Q 1.9 1 V = 10 Vdc) (Note 3) GS Q 4.2 2 SOURCE DRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 3.0 Adc, V = 0 Vdc) V Vdc S GS SD (I = 3.0 Adc, V = 0 Vdc, 0.89 1.0 S GS T = 150C) (Note 3) 0.74 J Reverse Recovery Time t 30 ns rr t 22 a (I = 3.0 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) (Note 3) S t 8.6 b Reverse Recovery Stored Charge Q 0.04 C RR 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures.