IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Features 75 A, 650 V Maximum Junction Temperature: T = 175C J V = 1.6 V (Typ.) CESat Positive Temperature Coefficient for Easy Parallel Operating High Current Capability C Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(Sat) C 100% of the Parts are Tested for I (Note 2) LM Fast Switching Tight Parameter Distribution G No Reverse Recovery/No Forward Recovery AECQ101 Qualified and PPAP Capable E Typical Applications Automotive On & Off Board Chargers DCDC Converters PFC Industrial Inverter G C E MAXIMUM RATINGS TO2473LD Rating Symbol Value Unit CASE 340CX CollectortoEmitter Voltage V 650 V CES GatetoEmitter Voltage V 20 V GES MARKING DIAGRAM Transient GatetoEmitter Voltage 30 Collector Current (Note 1) T = 25C I 80 A C C T = 100C 75 C Pulsed Collector Current (Note 2) I 300 A LM AYWWZZ Pulsed Collector Current (Note 3) I 300 A CM AFGHL 75T65SQDC Diode Forward Current (Note 1) T 25C I 35 A C = F T 100C 20 C = Pulsed Diode Maximum Forward Current I 200 A FM Maximum Power Dissipation T = 25C P 375 W C D T = 100C 188 C A = Assembly Location Operating Junction / Storage Temperature T , 55 to C J YWW = 3Digit Date Code Range T +175 STG ZZ = 2Digit Lot Traceability Code AFGHL75T65SQDC = Specific Device Code Maximum Lead Temp. for Soldering T 265 C L Purposes, 1/8 from case for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Value limited by bond wire Device Package Shipping 2. V = 400 V, V = 15 V, I = 300 A, R = 15 , Inductive Load, 100% of the CC GE C G AFGHL75T65SQDC TO 247 3L 30 Units / Rail Parts are Tested. 3. Repetitive Rating: pulse width limited by max. Junction temperature Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: January, 2021 Rev. 1 AFGHL75T65SQDC/DAFGHL75T65SQDC THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal resistance junctiontocase, for IGBT R 0.4 C/W JC Thermal resistance junctiontocase, for Diode R 1.55 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of Breakdown V = 0 V, 0.6 V/C GE BV CES Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collectoremitter V = 20 V, I 400 nA GE GES shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 75 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 75 A, T = 175C 2.0 GE C J DYNAMIC CHARACTERISTICS V = 30 V, pF Input capacitance C 4574 CE ies V = 0 V, GE Output capacitance C 289.4 f = 1 MHz oes Reverse transfer capacitance C 11.2 res V = 400 V, nC Gate charge total Q 139 CE g I = 75 A, C Gatetoemitter charge Q 25 V = 15 V ge GE Gatetocollector charge Q 33 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 22.4 ns C d(on) V = 400 V, CC Rise time t 19.2 r I = 37.5 A, C R = 4.7 , G Turnoff delay time t 116.8 d(off) V = 15 V, GE Inductive Load Fall time t 9.6 f Turnon switching loss E 0.48 mJ on Turnoff switching loss E 0.24 off Total switching loss E 0.72 ts T = 25C, ns Turnon delay time t 24 C d(on) V = 400 V, CC Rise time t 49.6 I = 75 A, r C R = 4.7 , G Turnoff delay time t 107.2 d(off) V = 15 V, GE Inductive Load Fall time t 70.4 f Turnon switching loss E 1.68 mJ on Turnoff switching loss E 1.11 off Total switching loss E 2.79 ts www.onsemi.com 2