ESD6100 ON Semiconductor

ESD6100 2 Channel Very Low Capacitance ESD Protection Device in CSP Product Description ESD6100 ELECTRICAL SPECIFICATIONS AND CONDITIONS Table 2. PARAMETERS AND OPERATING CONDITIONS Parameter Rating Units Storage Temperature Range 55 to +150 C Operating Temperature Range 40 to +85 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units V Input Operating Supply Voltage 3.0 5.5 V IN V Breakdown Voltage (Positive) I = 1 mA 6 V B F I Channel Leakage Current V = 3 V (Note 2) 1.0 100 nA LEAK IN C Channel Input Capacitance At 1 MHz, V = 0 V (Note 2) 1.5 pF IN IN Channel Input Capacitance Matching At 1 MHz, V = 0 V (Note 2) 0.02 pF C IN IN V ESD Protection Peak Discharge Voltage at any (Notes 2 and 3) kV ESD channel input a) Contact Discharge per IEC 6100042 8 standard b) Air Discharge per IEC 6100042 standard 15 V Channel Clamp Voltage I = 1 A, t = 8/20 s (Note 2) V CL PP P Positive Transients +9.8 Negative Transients 1.5 R Dynamic Resistance I = 1 A, t = 8/20 s DYN PP P Positive Transients Any I/O pin to Ground (Note 2) 0.7 Negative Transients 0.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. All parameters specified at T = 25C unless otherwise noted. A 2. These parameters are guaranteed by design and characterization. 3. Standard IEC 6100042 with C = 150 pF, R = 330 . Discharge Discharge