ESD7461, SZESD7461 Ultra-Low Capacitance ESD Protection MicroPackaged Diodes for ESD Protection The ESD7461 is designed to protect voltage sensitive components www.onsemi.com that require ultralow capacitance from ESD and transient voltage events. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. MARKING Features DIAGRAM Industry Leading Capacitance Linearity Over Voltage UltraLow Capacitance: 0.3 pF Typ XDFN2 V M CASE 711AM Insertion Loss: 0.05 dB at 1 GHz 0.21 dB at 3 GHz Low Leakage: < 1 nA Protection for the following IEC Standards: V = Specific Device Code M = Date Code IEC6100042 (ESD): Level 4 18 kV Contact IEC6100044 (EFT): 40 A 5/50 ns IEC6100045 (Lightning): 1 A (8/20 s) ORDERING INFORMATION ISO 10605 (ESD) 330 pF/2 k 23 kV Contact SZ Prefix for Automotive and Other Applications Requiring Unique Device Package Shipping Site and Control Change Requirements AECQ101 Qualified and ESD7461N2T5G XDFN2 8000 / Tape & PPAP Capable (PbFree) Reel These Devices are PbFree, Halogen Free/BFR Free and are RoHS SZESD7461N2T5G XDFN2 8000 / Tape & Compliant (PbFree) Reel For information on tape and reel specifications, Typical Applications including part orientation and tape sizes, please RF Signal ESD Protection refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. RF Switching, PA, and Antenna ESD Protection Near Field Communications USB 2.0, USB 3.0 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit IEC 6100042 (ESD) (Note 1) 18 kV Total Power Dissipation (Note 2) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2016 Rev. 1 ESD7461/DESD7461, SZESD7461 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional TVS *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 16 V RWM Breakdown Voltage V I = 1 mA (Note 3) 16.5 V BR T Reverse Leakage Current I V = 5 V <1 100 nA R RWM Clamping Voltage TLP V I = 8 A (Note 4) 35 V C PP Clamping Voltage TLP V I = 16 A (Note 4) 39 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.3 0.55 pF J R V = 0 V, f = 1 GHz 0.3 0.55 R Dynamic Resistance R TLP Pulse 1.05 DYN Insertion Loss f = 1 GHz 0.05 dB f = 3 GHz 0.21 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 1.303 1 1.E04 0.8 1.E05 1.E06 0.6 1.E07 1.E08 0.4 1.E09 1.E10 0.2 1.E11 0 1.E12 30 20 10 0 10 20 30 18 15 12 9 6 3 0 3 6 9 12 15 18 VOLTAGE (V) VOLTAGE (V) Figure 1. Typical IV Characteristics Figure 2. Typical CV Characteristics www.onsemi.com 2 CURRENT (A) CAPACITANCE (pF)