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FDD3706/FDU3706 March 2015 FDD3706/FDU3706 20V N- This N -Channel MOSFET has been designed 50 A, 20 V R = 9 m V = 10 V specifically to improve the overall efficiency of DC/DC R = 11 m V = 4.5 V converters using either synchronous or conventional R = 16 m V = 2.5 V switching PWM controllers. It has b een optimized for D low gate charge, low R, fast switching speed and extremely low R in a small package. Low gate charge (16 nC) Fast Switching DC/DC converter High performance trench technology for extremely Motor Drives DS(ON) D G I-PAK G (TO-251AA) TO-252 G D S S o T =25 C unless otherwise noted A Ratings Units V Drain -Source Vo ltage V V - Source Voltage V I D Continuous Drain Current T C =25C A T =25C A Pulsed P W D Power Dissipation T =25C C T =25C A T =25C A T , T Operating and Storage Junction Temperature Range -55 to +175 C J S Thermal Characteristics R Thermal Resistance, Junction -to -Case C/W JC R Thermal Resistance, Junction -to -Ambient C/W R Thermal Resistance, Junction -to -Ambient C/W Device Marking Package Reel Size Tape width Quantity FDD3706 FDD3706 D -PAK (TO - 16mm 2500 units FDU3706 FDU3706 -PAK (TOI - 2002 Fairchild Semiconductor Corp. FDD3706/FDU3706 Rev. 1.3 75 N/A Tube 251) 13 252) Device Package Marking and Ordering Information JA 96 (Note 1b) JA 45 (Note 1a) 3.4 (Note 1) TG 1.6 (Note 1b) 3.8 (Note 1a) 44 (Note 3) 60 (Note 1a) 14.7 (Note 1a) 50 (Note 3) GSS 12 Gate DSS 20 Parameter Symbol Absolute Maximum Ratings (TO-252) D-PAK low R Applications DS(ON) DS( ON) GS S(ON) GS DS(ON) GS DS(ON) Features General Description MOSFET Channel PowerTrench