Silicon Carbide Schottky Diode 1200 V, 20 A FFSH20120A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of 1. Cathode 2. Anode power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 200 mJ High Surge Current Capacity 1 Positive Temperature Coefficient 2 Ease of Paralleling TO2472LD No Reverse Recovery/No Forward Recovery CASE 340CL This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant MARKING DIAGRAM Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSH 20120A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH20120A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2020 Rev. 2 FFSH20120A/DFFSH20120A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 1200 V RRM E Single Pulse Avalanche Energy (Note 1) 200 mJ AS I Continuous Rectified Forward Current T < 153C 20 A F C Continuous Rectified Forward Current T < 135C 30 A C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1190 A F,Max C 990 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 135 A F,SM p I Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 74 A F,RM p P Power Dissipation T = 25C 273 W TOT C T = 150C 46 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 200 mJ is based on starting T = 25C, L = 0.5 mH, I = 29 A, V = 150 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.55 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 20 A, T = 25C 1.45 1.75 V F F C I = 20 A, T = 125C 1.7 2.0 F C I = 20 A, T = 175C 2.0 2.4 F C I Reverse Current V = 1200 V, T = 25C 200 A R R C V = 1200 V, T = 125C 300 R C V = 1200 V, T = 175C 400 R C Q Total Capacitive Charge V = 800 V 120 nC C C Total Capacitance V = 1 V, f = 100 kHz 1220 pF R V = 400 V, f = 100 kHz 111 R V = 800 V, f = 100 kHz 88 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH20120A FFSH20120A TO2472LD Tube 30 Units www.onsemi.com 2