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This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. G D Features S TO220 9.0 A, 300 V, R = 450 m (Max.) V = 10 V, DS(on) GS CASE 340AT I = 4.5 A D Low Gate Charge (Typ. 17 nC) Low Crss (Typ. 16 pF) D 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted.) C Parameter Symbol Value Unit G DrainSource Voltage V 300 V DSS Drain Current Continuous (T = 25C) I 9.0 A C D S Continuous (T = 100C) 5.7 A C Drain Current Pulsed (Note 1) I 36 A DM ORDERING INFORMATION GateSource Voltage V 30 V GSS See detailed ordering and shipping information on page 2 of Single Pulsed Avalanche Energy (Note 2) E 420 mJ AS this data sheet. Avalanche Current (Note 1) I 9.0 A AR Repetitive Avalanche Energy (Note 1) E 9.8 mJ AR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (T = 25C) P 98 W C D Derate above 25C 0.78 W/C Operating and Storage Temperature T , T 55 to +150 C J STG Range Maximum Lead Temperature for Solder- T 300 C L ing, 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 8.64 mH, I = 9.0 A, V = 50 V, R = 25 starting T = 25C. AS DD G J 3. I 9.0 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: February, 2017 Rev. 2 FQP9N30/D