MBR340RLG ON Semiconductor

MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity MBR340 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 3) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 4) v V F (i = 1.0 Amp) 0.500 F (i = 3.0 Amp) 0.600 F (i = 9.4 Amp) 0.850 F Maximum Instantaneous Reverse Current Rated dc Voltage (Note 4) i mA R T = 25C 0.60 L T = 100C 20 L 3. Lead Temperature reference is cathode lead 1/32in from case. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 20 100 40 20 150C 10 10 4.0 2.0 100C 7.0 1.0 1000 0.4 5.0 0.2 75C 0.1 100 0.04 3.0 0.02 0.01 10 2.0 25C T = 150C 25C J 0.004 0.002 100C 10 0.001 1.0 02100 30 40 V REVERSE VOLTAGE (VOLTS) 0.7 R Figure 2. Typical Reverse Current* 0.5 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selec- tions can be estimated from these same curves if V is sufficiently R 0.3 below rated V . R 0.2 10 8.0 0.1 0.07 6.0 0.05 4.0 0.03 0.02 SQUARE 2.0 dc WAVE 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 20 40 60 80 100 120 140 160 180 200 v INSTANTANEOUS VOLTAGE (VOLTS) T , AMBIENT TEMPERATURE (C) F, A Figure 1. Typical Forward Voltage Figure 3. Current Derating (Mounting Method 3 per Note 5)