NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 Features Low ON Resistance NDF06N62Z THERMAL RESISTANCE Parameter Symbol NDF06N62Z Unit Junction toCase (Drain) R 4.0 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 620 V GS D DSS Breakdown Voltage Temperature Reference to 25C, BV / 0.6 V/C DSS Coefficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 620 V, V = 0 V DS GS 125C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 3.0 A R 0.98 1.2 GS D DS(on) OnResistance Gate Threshold Voltage V = V , I = 100 A V 3.0 4.5 V DS GS D GS(th) Forward Transconductance V = 15 V, I = 3.0 A g 5.0 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 923 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 106 oss f = 1.0 MHz Reverse Transfer Capacitance C 23 rss Total Gate Charge Q 32 nC g GatetoSource Charge Q 6.3 gs V = 310 V, I = 6.0 A, DD D V = 10 V GS GatetoDrain (Miller) Charge Q 17 gd Plateau Voltage V 6.3 V gp Gate Resistance R 3.2 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 13 ns d(on) Rise Time t 19 r V = 310 V, I = 6.0 A, DD D V = 10 V, R = 5 GS G Turn Off Delay Time t 32 d(off) Fall Time t 28 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 6.0 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 338 ns rr V = 0 V, V = 30 V GS DD I = 6.0 A, di/dt = 100 A/ s Reverse Recovery Charge S Q 2.0 C rr 3. Insertion mounted 4. Pulse Width 380 s, Duty Cycle 2%.