CLL3595 TR Central Semiconductor

CLL3595 www.centralsemi.com SURFACE MOUNT DESCRIPTION: LOW LEAKAGE SILICON DIODE The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 150 V RRM Peak Working Reverse Voltage V 125 V RWM Average Forward Current I 150 mA O Forward Steady-State Current I 225 mA F Recurrent Peak Forward Current i 600 mA f Peak Forward Surge Current (1.0s pulse) I 500 mA FSM Peak Forward Surge Current (1.0s pulse) I 4.0 A FSM Power Dissipation P 500 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 350 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=125V 1.0 nA R R I V =125V, T=125C 500 nA R R A I V =125V, T=150C 3.0 A R R A I V =30V, T=125C 300 nA R R A BV I=100A 150 V R R V I=1.0mA 0.54 0.69 V F F V I=5.0mA 0.62 0.77 V F F V I=10mA 0.65 0.80 V F F V I=50mA 0.75 0.88 V F F V I=100mA 0.79 0.92 V F F V I=200mA 0.834 1.00 V F F C V =0, f=1.0MHz 8.0 pF T R t V =3.5V, I =10mA, R=1.0k 3.0 s rr R f L R4 (8-January 2010)CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE SOD-80 CASE - MECHANICAL OUTLINE MARKING: CATHODE BAND R4 (8-January 2010) www.centralsemi.com