The ON Semiconductor NTBG080N120SC1 is a Silicon Carbide MOSFET N-Channel with a 1200 V blocking voltage, 80 mO drain source on-state resistance, and is packaged into a D2PAK-7L through hole mounting form factor. It is ideal for industrial and automotive applications such as DC-DC converters, welding systems, motor control, and high temperature environments. This MOSFET is designed specifically for providing low losses, improved switching performance, and higher power density in comparison to large silicon MOSFETs. Additionally, its high breakdown voltage and zero-gate threshold voltage makes it easy to integrate into the customer’s design.