Product Information

NTD3055L170T4

NTD3055L170T4 electronic component of ON Semiconductor

Datasheet
MOSFET 60V 9A N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3562: USD 0.1062 ea
Line Total: USD 378.28

0 - Global Stock
MOQ: 3562  Multiples: 3562
Pack Size: 3562
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2500
Multiples : 1

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NTD3055L170T4
ON Semiconductor

2500 : USD 0.2082
2500 : USD 0.2024
2500 : USD 0.1965
5000 : USD 0.1895
15000 : USD 0.1895
30000 : USD 0.1895

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3562
Multiples : 3562

Stock Image

NTD3055L170T4
ON Semiconductor

3562 : USD 0.1062

     
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NTD3055L170, NVD3055L170 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK www.onsemi.com 9.0 A, 60 V Designed for low voltage, high speed switching applications in 9.0 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge R = 170 m DS(on) circuits. D Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 NChannel Qualified and PPAP Capable G These are PbFree Devices S Typical Applications Power Supplies 4 Converters 4 Power Motor Controls Bridge Circuits 1 2 1 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) 3 3 J DPAK IPAK Rating Symbol Value Unit CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS (Surface Mounted) (Straight Lead) STYLE 2 STYLE 2 DraintoGate Voltage (R = 10 M ) V 60 Vdc DGR GS GatetoSource Voltage Vdc MARKING DIAGRAMS Continuous V 15 GS & PIN ASSIGNMENTS Nonrepetitive (t 10 ms) V 20 p GS Drain Current Adc 1 Gate Continuous T = 25C I 9.0 AYWW A D 4 Continuous T = 100C I 3.0 2 Drain 31 A D Drain Single Pulse (t 10 s) I 27 Apk 70LG p DM 3 Source Total Power Dissipation T = 25C P 28.5 W A D Derate above 25C 0.19 W/C Total Power Dissipation T = 25C (Note 1) 2.1 W 1 Gate A AYWW 4 Total Power Dissipation T = 25C (Note 2) 1.5 W A 2 Drain 31 Drain Operating and Storage Temperature Range T , T 55 to C J stg 70LG 3 Source 175 Single Pulse DraintoSource Avalanche E 30 mJ AS A = Assembly Location* Energy Starting T = 25C J Y = Year (V = 25 Vdc, V = 5.0 Vdc, DD GS WW = Work Week L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc) L DS 3170L = Device Code Thermal Resistance C/W G = PbFree Package JunctiontoCase R 5.2 JC * The Assembly Location code (A) is front side JunctiontoAmbient (Note 1) R 71.4 JA optional. In cases where the Assembly Location is JunctiontoAmbient (Note 2) R 100 JA stamped in the package, the front side assembly Maximum Lead Temperature for Soldering T 260 C L code may be blank. Purposes, 1/8 from case for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 7 NTD3055L170/DNTD3055L170, NVD3055L170 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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