NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single NChannel, DPAK/IPAK
Features
Low R to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
NTD4808N, NVD4808N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctiontoCase (Drain) R 2.75
JC
JunctiontoTAB (Drain) R 3.5
JCTAB
C/W
JunctiontoAmbient Steady State (Note 1) R 57
JA
JunctiontoAmbient Steady State (Note 2) R 107
JA
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V / 27
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1
DSS GS J
V = 24 V A
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V
GS(TH)
GS DS D
Negative Threshold Temperature V /T 5.6
GS(TH) J
mV/C
Coefficient
DraintoSource On Resistance R V = 10 to 11.5 V I = 30 A 6.7 8.0
DS(on) GS D
I = 15 A 6.6
m
D
V = 4.5 V I = 30 A 10.3 12.4
GS D
I = 15 A 9.8
D
Forward Transconductance g V = 15 V, I = 15 A 11.4 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 1538
ISS
Output Capacitance C V = 0 V, f = 1 MHz, V = 12 V 334 pF
OSS
GS DS
Reverse Transfer Capacitance C 180
RSS
Total Gate Charge Q 11.3 13
G(TOT)
Threshold Gate Charge Q 1.6
G(TH)
V = 4.5 V, V = 15 V; I = 30 A nC
GS DS D
GatetoSource Charge Q 4.9
GS
GatetoDrain Charge Q 4.9
GD
Total Gate Charge Q V = 11.5 V, V = 15 V; 26 nC
G(TOT) GS DS
I = 30 A
D
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 12.3
d(ON)
Rise Time t 21.3
r
V = 4.5 V, V = 15 V, I = 15 A,
GS DS D
ns
R = 3.0
G
TurnOff Delay Time t 14.6
d(OFF)
Fall Time t 6.0
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.