NTD4809N, NVD4809N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 58 A Features NTD4809N, NVD4809N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.9 C/W JC JunctiontoTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 1) R 57.1 JA JunctiontoAmbient Steady State (Note 2) R 107.2 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 25 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 to I = 30 A 7.0 9.0 m DS(on) GS D 11.5 V I = 15 A 7.0 D V = 4.5 V I = 30 A 12 14 GS D I = 15 A 11 D Forward Transconductance gFS V = 15 V, I = 15 A 9.0 S DS D CHARGES AND CAPACITANCES Input Capacitance C 1456 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 315 oss V = 12 V DS Reverse Transfer Capacitance C 200 rss Total Gate Charge Q 11 13 nC G(TOT) Threshold Gate Charge Q 2.5 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 4.8 GS GatetoDrain Charge Q 5.0 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 25 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12.3 ns d(on) Rise Time t 21.3 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 15.1 d(off) Fall Time t 5.3 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.